JPH0478051B2 - - Google Patents

Info

Publication number
JPH0478051B2
JPH0478051B2 JP58213525A JP21352583A JPH0478051B2 JP H0478051 B2 JPH0478051 B2 JP H0478051B2 JP 58213525 A JP58213525 A JP 58213525A JP 21352583 A JP21352583 A JP 21352583A JP H0478051 B2 JPH0478051 B2 JP H0478051B2
Authority
JP
Japan
Prior art keywords
transistor
diode
high voltage
fet
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58213525A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60105318A (ja
Inventor
Yogo Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58213525A priority Critical patent/JPS60105318A/ja
Publication of JPS60105318A publication Critical patent/JPS60105318A/ja
Publication of JPH0478051B2 publication Critical patent/JPH0478051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Landscapes

  • Electronic Switches (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58213525A 1983-11-14 1983-11-14 高圧スイツチ回路 Granted JPS60105318A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58213525A JPS60105318A (ja) 1983-11-14 1983-11-14 高圧スイツチ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58213525A JPS60105318A (ja) 1983-11-14 1983-11-14 高圧スイツチ回路

Publications (2)

Publication Number Publication Date
JPS60105318A JPS60105318A (ja) 1985-06-10
JPH0478051B2 true JPH0478051B2 (en]) 1992-12-10

Family

ID=16640632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58213525A Granted JPS60105318A (ja) 1983-11-14 1983-11-14 高圧スイツチ回路

Country Status (1)

Country Link
JP (1) JPS60105318A (en])

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114342A (en) * 1977-03-16 1978-10-05 Hitachi Ltd Signal detection circuit
US4207769A (en) * 1978-07-24 1980-06-17 Hughes Aircraft Company Change of angular acceleration sensor

Also Published As

Publication number Publication date
JPS60105318A (ja) 1985-06-10

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